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Field effect (semiconductor)
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field.
In a metal the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material. However, in a semiconductor the lower density of electrons (and possibly holes) that can respond to an applied field is sufficiently small that the field can penetrate quite far into the material. This field penetration alters the conductivity of the semiconductor near its surface, and is called the ''field effect''. The field effect underlies the operation of the Schottky diode and of field-effect transistors, notably the MOSFET, the JFET and the MESFET.〔The acronyms stand for ''M''etal ''O''xide ''S''emiconductor ''F''ield ''E''ffect ''T''ransistor, ''J''unction ''F''ield ''E''ffect ''T''ransistor, and ''ME''tal ''S''emiconductor ''F''ield ''E''ffect ''T''ransistor. For a discussion see, for example, 〕
==Surface conductance and band bending==
The change in surface conductance occurs because the applied field alters the energy levels available to electrons to considerable depths from the surface, and that in turn changes the occupancy of the energy levels in the surface region. A typical treatment of such effects is based upon a ''band-bending diagram'' showing the positions in energy of the ''band edges'' as a function of depth into the material.
An example band-bending diagram is shown in the figure. For convenience, energy is expressed in eV and voltage is expressed in volts, avoiding the need for a factor ''q'' for the elementary charge. In the figure, a two-layer structure is shown, consisting of an insulator as left-hand layer and a semiconductor as right-hand layer. An example of such a structure is the ''MOS capacitor'', a two-terminal structure made up of a metal ''gate'' contact, a semiconductor ''body'' (such as silicon) with a body contact, and an intervening insulating layer (such as silicon dioxide, hence the designation ''O''). The left panels show the lowest energy level of the conduction band and the highest energy level of the valence band. These levels are "bent" by the application of a positive voltage ''V''. By convention, the energy of electrons is shown, so a positive voltage penetrating the surface ''lowers'' the conduction edge. A dashed line depicts the occupancy situation: below this Fermi level the states are more likely to be occupied, the conduction band moves closer to the Fermi level, indicating more electrons are in the conducting band near the insulator.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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